Стенд
Тестовый стенд был следующий:
- процессор: AMD Ryzen 2700X;
- система охлаждения: NZXT Kraken X62;
- материнская плата: MSI X470 GAMING M7 AC (UEFI V1.51);
- память №1: 2x8GB G.Skill Sniper X 3600C19 (Hynix CJR 18 nm, Single Rank);
- память №2: 2x8GB G.Skill Sniper X 3400C16 (Samsung B-die 20 nm, Single Rank);
- память №3: 2x16GB G.Skill Trident Z 3000C14 (Samsung B-die 20 nm, Dual Rank);
- видеокарта: MSI GeForce GTX 1080 Ti GAMING X;
- накопитель: Samsung 970 Pro 512GB;
- блок питания: Corsair HX750i;
- операционная система: Windows 10 64-bit Fall Creators Update;
- драйверы: NVIDIA GeForce 417.35 WHQL.
Все опубликованные пресеты имеют полную стабильность. Не забывайте, что нет универсальной предустановки. Различные топологии материнских плат, бининг памяти и процессора — это всегда лотерея. Если нет стабильности, сначала попробуйте соседние напряжения для SOC и DRAM.
Дополнительную информацию и пресеты настройки можно найти в программе DRAM Calculator for Ryzen.
2133 MHz — Default
- SOC Voltage: auto.
- Memory Voltage: auto.
- Power Down Mode: auto (enabled).
- Gear Down Mode: auto (enabled).
Samsung b-die 3200 MHz CL14 XMP (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.35 V.
- Power Down Mode: auto (enabled).
- Gear Down Mode: auto (enabled).
Samsung b-die 3200 MHz CL14 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.36 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Samsung b-die 3200 MHz CL14 (dual rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.37 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.
Samsung b-die 3200 MHz CL14 (multi rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.35 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Samsung b-die 3200 MHz CL12 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.50 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Samsung b-die 3333 MHz CL14 (dual rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.39 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.
Samsung b-die 3400 MHz CL14 (multi rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.39 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.
Samsung b-die 3466 MHz CL14 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.42 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Samsung b-die 3533 MHz CL14 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.44 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
- RTT_PARK: 48 ohm (RZQ/5) or 60 ohm (RZQ/4).
Samsung b-die 3600 MHz CL14 (single rank)
- SOC Voltage: 1.1 V.
- Memory Voltage: 1.45 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.
Hynix CJR 3200 MHz CL14 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.37 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Hynix CJR 3200 MHz CL14 (multi rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.37 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
- procODT: 48 ohm.
- RTT_NOM: 34 ohm (RZQ/7).
- RTT_WR: disabled.
- RTT_PARK: 40 ohm (RZQ/6).
Hynix CJR 3400 MHz CL14 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.45 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Hynix CJR 3466 MHz CL16 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.35 V.
- Power Down Mode: disabled.
- Gear Down Mode: disabled.
Hynix CJR 3600 MHz CL16 (single rank)
- SOC Voltage: 1.1 V.
- Memory Voltage: 1.40 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.
Hynix CJR 3800 MHz CL16 (single rank)
- SOC Voltage: 1.1 V.
- Memory Voltage: 1.42 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.
Hynix MFR/AFR, Micron b-die 3200 MHz CL16 (single rank)
- SOC Voltage: 1.025 V.
- Memory Voltage: 1.35 V – 1.37 V.
- Power Down Mode: disabled.
- Gear Down Mode: enabled.